Semiconductor light-emitting device having matrix-arranged light-emitting elements

ABSTRACT

In a semiconductor light-emitting device including a semiconductor body including light-emitting elements arranged in a matrix, and a support body adapted to support the semiconductor body, the semiconductor body further includes a plurality of optical shield layers each provided at one of a first side face of a first one of the light-emitting elements and a second side face of a second one of the light-emitting elements opposing the first side face of the first light-emitting element.

This application claims the priority benefit under 35 U.S.C. §119 toJapanese Patent Application No. JP2014-049183 filed on Mar. 12, 2014,which disclosure is hereby incorporated in its entirety by reference.

BACKGROUND

1. Field

The presently disclosed subject matter relates to a semiconductorlight-emitting device having a plurality of light-emitting elements suchas light-emitting diode (LED) elements arranged in a matrix.

2. Description of the Related Art

A prior art semiconductor light-emitting device formed by LED elementsarranged in a matrix including rows and columns has been used as avehicle headlamp. In such a semiconductor light-emitting device,luminous intensities of the LED elements are individually controlled inreal time to realize an adaptive drive beam (ADB) and an adaptivefront-lighting system (AFS) (see: JP2013-54849A & JP2013-54956A).

In an ADB control, when a preceding vehicle including an on-comingvehicle is detected by a radar unit or the like, the luminousintensities of only the LED elements against the preceding vehicle aredecreased to decrease the illuminance against the preceding vehiclewhile a high-beam mode is maintained. As a result, glaring against thepreceding vehicle can be suppressed while the visibility in a high-beammode can be maintained against the preceding vehicle.

In an AFS control, when a steering angle read from a steering anglesensor or the like is larger than a predetermined value, the LEDelements having high luminous intensities are shifted from a centralarea of the device to a right side or a left side of the device, tosubstantially decline the optical axis of the device while thevisibility in a high-beam mode is maintained.

FIG. 1A is a plan view illustrating the above-mentioned prior artsemiconductor light-emitting device, and FIG. 1B is a cross-sectionalview taken along the line B-B in FIG. 1A. As illustrated in FIGS. 1A and1B, the semiconductor light-emitting device includes a semiconductorwafer (body) 1 in which blue LED elements D₁₁, D₁₂, . . . , D₃₃ in threerows, three columns are formed and a phosphor layer P1 including yitriumaluminium garnet (YAG) particles P10 for wavelength-converting bluelight into yellow light to form white light is formed on the LEDelements D₁₁, D₁₂, . . . , D₃₃, and a support body 2 for supporting thesemiconductor body 1. In this case, the semiconductor body 1 iswafer-bonded onto the support body 2. In FIG. 1B, each of the LEDelements D₁₁, D₁₂, . . . , D₃₃ are mesa-shaped, so that the distancebetween side faces of two adjacent LED elements is gradually decreasedtoward the support body 2.

Note that each of the LED elements D₁₁, D₁₂, . . . , D₃₃ is square orrectangular viewed from the top, so that the LED elements D₁₁, D₁₂, . .. , D₃₃ can be in close proximity to each other.

In the semiconductor light-emitting device of FIGS. 1A and 1B, sincethere are still relatively large spaces between the LED elements D₁₁,D₁₂, . . . , D₃₃, even when the LED elements D₁₁, D₁₂, . . . , D₃₃ areoperated to emit lights L₁₁, L₁₂, . . . , L₃₃, respectively, asillustrated in FIG. 2A, dark regions DR would be created at the spaces.As a result, as illustrated in FIG. 2B, light emitting regions ER₂₂ andER₂₃ of the LED elements D₂₂ and D₂₃ would be decreased. In this case,the larger the spacing between the LED elements D₁₁, D₁₂, . . . , D₃₃,the larger the dark regions DR.

On the other hand, when the LED elements D₁₁, D₁₂, . . . , D₃₃ arecloser to each other as illustrated in FIGS. 3A and 3B, the dark regionsDR would be reduced in size to increase the light emitting regions. Inthis case, however, when the LED elements D₁₁, D₁₂, D₁₃, D₂₁, D₂₃, D₃₁,D₃₂, D₃₃ except for the LED element D₂₂ are operated to emit lights L₁₁,L₁₂, L₁₃, L₂₁, L₂₃, L₃₁, L₃₂, L₃₃, leakage lights LL would be leakedinto the non-operated LED element D₂₂ from its adjacent operated LEDelements. Therefore, weak light would be emitted from the non-operatedLED element D₂₂, so that optical crosstalk would be generated betweenthe non-operated LED element and its adjacent operated LED elements.

Thus, in the semiconductor light-emitting device of FIGS. 1A and 1B, itis preferable that both of the dark regions DR and the optical crosstalkbe as small as possible; however, there is a trade-off relationshipbetween the dark regions DR and the optical crosstalk.

SUMMARY

The presently disclosed subject matter seeks to solve one or more of theabove-described problems.

According to the presently disclosed subject matter, in a semiconductorlight-emitting device including a semiconductor body includinglight-emitting elements arranged in a matrix, and a support body adaptedto support the semiconductor body, the semiconductor body furtherincludes a plurality of optical shield layers each provided at one of afirst side face of a first one of the light-emitting elements and asecond side face of a second one of the light-emitting elements opposingthe first side face of the first light-emitting element.

Thus, according to the presently disclosed subject matter, the darkregions between the light-emitting elements can be decreased orsuppressed, while no optical crosstalk between the light-emittingelements is generated regardless of the distance between thelight-emitting elements.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other advantages and features of the presently disclosedsubject matter will be more apparent from the following description ofcertain embodiments, as compared with the prior art, taken inconjunction with the accompanying drawings, wherein:

FIG. 1A is a plan view illustrating a prior art semiconductorlight-emitting device;

FIG. 1B is a cross-sectional view taken along the line B-B in FIG. 1A;

FIG. 2A is a perspective view of the semiconductor light-emitting deviceof FIG. 1A for explaining the dark regions;

FIG. 2B is a cross-sectional view taken along the line B-B in FIG. 2A;

FIG. 3A is a perspective view of the semiconductor light-emitting deviceof FIG. 1A for explaining the optical crosstalk;

FIG. 3B is a cross-sectional view taken along the line B-B in FIG. 3A;

FIG. 4A is a plan view illustrating a first embodiment of thesemiconductor light-emitting device according to the presently disclosedsubject matter;

FIG. 4B is a cross-sectional view taken along the line B-B in FIG. 4A;

FIG. 5 is a cross-sectional view taken along the line B-B in FIG. 4A forexplaining the dark region and the optical crosstalk when the opticalshield layer is reflective;

FIGS. 6A and 6B are cross-sectional views taken along the line B-B inFIG. 4A for explaining the dark region and the optical crosstalk whenthe optical shield layer is absorptive;

FIG. 7 is a detailed cross-sectional view of the semiconductorlight-emitting device of FIG. 4B;

FIGS. 8 and 9 are cross-sectional views for explaining a method formanufacturing the semiconductor light-emitting device of FIG. 7;

FIG. 10 is a plan view illustrating a second embodiment of thesemiconductor light-emitting device according to the presently disclosedsubject matter;

FIG. 11 is a cross-sectional view taken along the line XI-XI in FIG. 10;

FIG. 12 is a cross-sectional view illustrating a third embodiment of thesemiconductor light-emitting device according to the presently disclosedsubject matter;

FIG. 13 is a cross-sectional view for explaining the dark region and theoptical crosstalk in the semiconductor light-emitting device of FIG. 12when the optical shield layer is reflective;

FIG. 14 is a cross-sectional view for explaining the dark region and theoptical crosstalk in the semiconductor light-emitting device of FIG. 12when the optical shield layer is absorptive;

FIG. 15 is a cross-sectional view illustrating a fourth embodiment ofthe semiconductor light-emitting device according to the presentlydisclosed subject matter; and

FIG. 16 is a cross-sectional view illustrating a modification of thesemiconductor light-emitting device of FIG. 4B.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

FIG. 4A illustrates a first embodiment of the semiconductorlight-emitting device according to the presently disclosed subjectmatter, and FIG. 4B is a cross-sectional view taken along the line B-Bin FIG. 4A.

In FIGS. 4A and 4B, one optical shield layer OS1 is formed on one of aslant side face of one LED element and a slant side face of its adjacentLED element opposing the slant side face of the one LED element. Forexample, as illustrated in FIG. 4B, the LED element D₂₂ is adjacent tothe LED element D₂₃, and a slant side face F₂₂ of the LED element D₂₂opposes a slant side face F₂₃ of the LED element D₂₃. In this case, oneoptical shield layer OS1 is formed on either the side face F₂₂ of theLED element D₂₂ or the side face F₂₃ of the LED element D₂₃.

The optical shield layer OS1 is made of metal such as Ag, Pt, Al, Rh orTi for shielding the LED elements from visible light of their adjacentLED elements. The optical shield layer OS1 is reflective or absorptive;however, the optical shield layer OS1 is not completely reflective ornot completely absorptive

As illustrated in FIG. 5, if the optical shield layers OS1 arecompletely reflective, since lights RL₂₂ and RL₂₂′ from the LED elementD₂₂ are totally reflected by the optical shield layers OS1, the lightsRL₂₂ and RL₂₂′ would be emitted along with the light L₂₂. Also, sincelight RL₂₃ from the LED element D₂₃ is totally reflected by the opticalshield layer OS1, the light RL₂₃ would be emitted along with the lightL₂₃. In this case, however, light RL₂₃′ from the LED element D₂₃ may beleaked therefrom. Therefore, the dark region DR between the LED elementD₂₂ and D₂₃ determined by the optical shield layer OS1 is decreased, sothat the light emitting regions ER₂₂ and ER₂₃ of the LED elements D₂₂and D₂₃ are increased. Also, no optical crosstalk between the lightemitting regions ER₂₂ and ER₂₃ is generated regardless of the distancebetween the LED elements D₂₂ and D₂₃.

As illustrated in FIG. 6A, if the optical shield layers OS1 arecompletely absorptive, lights RL₂₂ and RL₂₂′ from the LED element D₂₂are completely absorbed by the optical shield layers OS1, and also,light RL₂₃ from the LED element D₂₃ is completely absorbed by theoptical shield layer OS1. In this case, however, light RL₂₃′ from theLED element D₂₃′ still may be leaked therefrom. Therefore, although thedark region DR between the LED element D₂₂ and D₂₃ is not decreased, sothat the light emitting regions ER₂₂ and ER₂₃ of the LED elements D₂₂and D₂₃ are not increased, no optical crosstalk between the lightemitting regions ER₂₂ and ER₂₃ is generated.

On the other hand, in order to increase the light emitting regions ER₂₂and ER₂₃ of FIG. 6A, the LED elements D₂₂ and D₂₃ can be closer to eachother as illustrated in FIG. 6B. In this case, the dark region DRbetween the LED elements D₂₂ and D₂₃ determined by the spacingtherebetween can be decreased or suppressed to increase the lightemitting regions ER₂₂ and ER₂₃, while no optical crosstalk between thelight emitting regions ER₂₂ and ER₂₃ is generated.

Thus, in the semiconductor light-emitting device of FIGS. 4A and 4B, thedark regions DR can be decreased or suppressed, while no opticalcrosstalk between the LED elements is generated.

FIG. 7 is a detailed cross-sectional view of the semiconductorlight-emitting device of FIG. 4B. In FIG. 7, the phosphor layer P1 isomitted to simplify the description.

The semiconductor body 1 includes an n-type AlInGaN layer 11, an activeAlInGaN layer 12 and a p-type AlInGaN layer 13, which are represented byAl_(x)In_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1).

A reflective layer 14 made of metal such as Ag, Pt, Ni, Al, Pd or theiralloy having good ohmic contact characteristics with the p-type AlInGaNlayer 13 is formed on the p-type AlInGaN layer 13, and a cap layer 15made of refractory metal such as Ti, Pd, Mo, Ru or Ir or noble metalsuch as Pt or Au is formed to cover the reflective layer 14. The caplayer 15 is hardly migrated to avoid the migration of the reflectivelayer 14. The reflective layer 14 and the cap layer 15 serve as a p-sideelectrode. Note that a metal oxide layer made of indium tin oxide (ITO)or indium zinc oxide IZO can be inserted between the p-type AlInGaNlayer 13 and the reflective layer 14 to enhance the reflectivity.

An etching adjustment layer 16 made of insulating material such assilicon dioxide or silicon nitride is provided for isolating the LEDelements D₂₂ and D₂₃ from each other. The etching adjustment layer 16serves as an etching stopper as well as a protecting layer for wiringlayers of the support body 2.

An insulating layer 17 made of silicon dioxide or silicon nitride isformed on the entire surface. In this case, a contact hole CONT1 isperforated in the p-type AlInGaN layer 13 and the active AlInGaN layer12 to reach the n-type AlInGaN layer 11 before the formation of theinsulating layer 17.

An n-side electrode 18 made of metal such as Ti, Al, Pt or Au havinggood ohmic contact characteristics with the n-type AlInGaN layer 11 isformed in the contact hole CONT1 to reach the n-type AlInGaN layer 11.

The n-type AlInGaN layer 11 has a protruded light extracting surface tosuppress the total internal reflection component and the Fresnelcomponent, thus improving the light extracting efficiency.

An insulating layer 19 made of silicon dioxide or silicon nitride isformed on a side face of the n-type AlInGaN layer 11, the active AlInGaNlayer 12 and the p-type AlInGaN layer 13. Also, an optical shield layerOS1 is formed on the insulating layer 19. Further, a protection layer 20made of silicon dioxide is formed on the n-type AlInGaN layer 11 and theoptical shield layer OS1.

On the other hand, the support body 2 includes a support substrate 21made of heat dissipating material such as Si, AlN, Mo, W or CuW, p-sidewiring layers 22 formed on the support substrate 21, an insulating layer23 made of silicon dioxide or the like formed on the p-side wiringlayers 22, an n-side wiring layer 24 formed on the insulating layer 23,and a p-side electrode 25 formed in a contact hole CONT3 of theinsulating layer 23 to reach one of the p-side wiring layers 22.

The semiconductor body 1 is wafer-bonded onto the support body 2, sothat the n-side electrode 18 is bonded to the n-side wiring layer 24 bya bonding layer 31, and the cap layer 15 coupled to the p-type AlInGaNlayer 13 is bonded to the p-side electrode 25 by a bonding layer 32.

The LED elements are provided at intersections between the p-side wiringlayers 22 and the n-side wiring layers 24 which are isolated by theinsulating layer 23. Therefore, the LED elements are operatedindividually in real time by supplying voltages to the p-side wiringlayers 22 and the n-side wiring layer 24.

A method for manufacturing the semiconductor light-emitting device willnow be explained with reference to FIGS. 8 and 9.

First, referring to FIG. 8, a growing sapphire substrate 10 is prepared.Then, an n-type AlInGaN layer 11, an active AlInGaN layer 12 and ap-type AlInGaN layer 13 are sequentially and epitaxially grown on thegrowing sapphire substrate 10 by a metal organic chemical vapordeposition (MOCVD) process. In this case, the active AlInGaN layer 12can be of a multiple quantum well (MQW) structure, of a single quantumwell (SQW) structure or of a single layer.

Next, a reflective layer 14 and a cap layer 15 are formed on the p-typeAlInGaN layer 13 by a sputtering process or the like, and are patternedby a photolithography/etching process.

Next, an etching adjustment layer 16 is formed by a sputtering processor the like, and is patterned by a photolithography/etching process.

Next, a contact hole CONT1 is perforated in the p-type AlInGaN layer 13and the active AlInGaN layer 12 to reach the n-type AlInGaN layer 11.

Next, an insulating layer 17 is formed on the entire surface includingthe sidewall of the contact hole CONT1 by a CVD process or the like.Then, a photolithography/etching process is performed upon theinsulating layer 17 to expose the bottom of the contact hole CONT1 andform a contact hole CONT2 in the insulating layer 17 opposing the caplayer 15.

Next, an n-side electrode 18 is formed in the contact hole CONT1 by asputtering process or the like and a photolithography/etching process.

Next, an adhesive layer 311 including Au on its upper surface portion isformed on the n-side electrode 18. The adhesive layer 311 is used forthe bonding layer 31 of FIG. 7. Also, an adhesive layer 321 including Auon its upper surface portion is formed on the cap layer 15. The adhesivelayer 321 is used for the bonding layer 32 of FIG. 7.

On the other hand, a support substrate 21 is prepared. Then, p-sidewiring layers 22 are formed by a sputtering processor the like and aphotolithography/etching process on the support substrate 21.

Next, an insulating layer 23 is formed by a CVD process on the p-sidewiring layers 22.

Next, a contact hole CONT3 is perforated by a photolithography/etchingprocess in the insulating layer 23.

Next, a p-side electrode 25 is formed by a sputtering process and thelike and a photolithography/etching process in the contact hole CONT3 ofthe insulating layer 23.

Next, an adhesive layer 312 including Au on its upper surface portion isformed on the n-side wiring layer 24. The adhesive layer 312 is used forthe bonding layer 31 of FIG. 7. Also, an adhesive layer 322 including Auon its upper surface portion is formed on the p-side electrode 25. Theadhesive layer 322 is used for the bonding layer 32 of FIG. 7.

Next, the semiconductor body 1 is bonded by a thermal pressurizingprocess onto the support body 2, thus obtaining a semiconductorlight-emitting device as illustrated in FIG. 9. As a result, theadhesive layers 311 and 312 are combined into a bonding layer 31, andthe adhesive layers 321 and 322 are combined into a bonding layer 32. Inthis case, if a material such as Au at the upper surface portion of theadhesive layer 311 is different from a material such as Sn of theadhesive layer 312, the bonding layer 31 is an AuSn eutectic alloylayer. Similarly, if a material such as Au at the upper surface portionof the adhesive layer 321 is different from a material such as Sn of theadhesive layer 322, the bonding layer 32 is an AuSn eutectic alloylayer.

Next, the growing sapphire substrate 10 is removed by a wet etchingprocess or the like.

Next, the n-type AlInGaN layer 11, the active AlInGaN layer 12 and thep-type AlInGaN layer 13 are mesa-etched by a reactive ion etching (RIE)process using the etching adjustment layer 16 as an etching stopper.

Next, an insulating layer 19 is formed by a sputtering processor thelike and a photolithography/etching process on a slant side face of themesa-etched structure.

Next, an optical shield layer OS1 is formed by a lift-off process on theinsulating layer 19. That is, a photolithography process is carried outto form a resist pattern on the insulating layer 19. Then, a metal layersuch as Ag, Pt, Al, Rh or Ti is deposited by an electron beam (EB)evaporation process or a sputtering process on the entire surface. Then,the resist pattern is removed.

Next, the surface of the n-type AlInGaN layer 11 is etched by a dryetching and the like, so that the surface of the n-type AlInGaN layer 11is protruded.

Then, a protection layer 20 is formed by a sputtering process or thelike on the entire surface.

Finally, the support body 2 is mounted on a mounting substrate (notshown), and necessary wires are bonded between the semiconductorlight-emitting device and the mounting substrate. As occasion demands,the entirety of the semiconductor light-emitting device is resin-molded(not shown).

In FIG. 4A, no optical shield layers are provided at outermost sidefaces of the LED elements; however, such optical shield layers can be atthe outermost side faces, to obtain a clearly illuminated image, asoccasion demands.

In FIG. 10, which is a plan view illustrating a second embodiment of thesemiconductor light-emitting device according to the presently disclosedsubject matter, optical shield layers OS2, that are conductive, serve asn-side electrodes. That is, the optical shield layers OS2 areelectrically connected to the n-type AlInGaN layer 11 (see: FIG. 11) ofthe LED elements D₁₁, D₁₂, . . . , D₃₃, and also, are electricallyconnected via intermediate electrodes IE to an n-side pad P_(n). Also,the p-side wiring layers 22 of the LED elements D₁₁, D₁₂, . . . , D₃₃are electrically connected to p-side pads P_(p11), P_(p12), . . . ,P_(p33), respectively. Therefore, the LED elements D₁₁, D₁₂, . . . , D₃₃can be individually operated by supplying voltages to the n-side padP_(n) and the p-side pads P_(p11), P_(p12), . . . , P_(p33).

As illustrated in FIG. 11, which is a cross-sectional view taken alongthe line XI-XI in FIG. 10, since the optical shield layers OS2 serve asn-side electrodes, the n-side electrode 15 and the bonding layer 31 ofFIG. 7 are not provided. However, the n-side electrode 15 and thebonding layer 31 can be provided; in this case, currents can also besupplied to the LED elements from the n-side electrode 18 of FIG. 7, sothat, even when the area of each of the LED elements is large, thecurrent flowing therethrough can be large, thus increasing the luminousintensities of the LED elements simultaneously with suppressingirregularity of the luminous intensity within the LED elements.

In FIG. 11, since the intermediate electrodes IE serve as the etchingadjustment layers 16 of FIG. 7, the etching adjustment layers 16 are notprovided.

The method for manufacturing the semiconductor light-emitting device ofFIG. 10 is about the same as the method for manufacturing thesemiconductor light-emitting device of FIG. 7, except for the following.Instead of the formation of the etching adjustment layers 16 of FIG. 7,the intermediate electrodes IE are formed by a sputtering process andthe like and a photolithography/etching process in the insulating layer17. Also, before the formation of the optical shield layers OS2, theinsulating layer 19 is formed by a sputtering process or the like and aphotolithography/etching process on only a part of the slant side faceof the mesa-etched structure, so that the optical shield layers OS2 areelectrically connected to the n-type AlInGaN layer 11.

In FIG. 12, which is a cross-sectional view illustrating a thirdembodiment of the semiconductor light-emitting device according to thepresently disclosed subject matter, each of the LED elements D₂₂ and D₂₃are reversely mesa-shaped, so that the distance between side faces oftwo adjacent LED elements is increased toward the support body 2. Notethat a plan view of the semiconductor light-emitting device of FIG. 12is represented by FIG. 4A where the optical shield layer OS1 is replacedby the optical shield layer OS3. The optical shield layer OS3 isreflective or absorptive. Even in this case, the optical shield layerOS3 is not completely reflective and not completely absorptive.

As illustrated in FIG. 13, if the optical shield layers OS3 arecompletely reflective, since light RL₂₂ from the LED element D₂₂ istotally reflected by the optical shield layer OS3 and light RL₂₂′ isfrom the LED element D₂₂ is somewhat reflected by the slant side face ofthe LED element D₂₂ where the optical shield layer OS3 is not provided,the lights RL₂₂ and RL₂₂′ would be emitted along with the light L₂₂.Also, since light RL₂₃ from the LED element D₂₃ is totally reflected bythe optical shield layer OS3 and light RL₂₃′ from the LED element D₂₃ issomewhat reflected by the slant side face of the LED element D₂₃ wherethe optical shield layer OS3 is not provided, the lights RL₂₃ and RL₂₂′would be emitted along with the light L₂₃. Therefore, the dark region DRbetween the LED element D₂₂ and D₂₃ is not decreased, so that the lightemitting regions ER₂₂ and ER₂₃ of the LED elements D₂₂ and D₂₃ are notincreased. However, the LED elements D₂₂ and D₂₃ can be closer to eachother to increase the light emitting regions ER₂₂ and ER₂₃. Also, nooptical crosstalk between the light emitting regions ER₂₂ and ER₂₃ isgenerated regardless of the distance between the LED elements D₂₂ andD₂₃.

As illustrated in FIG. 14, if the optical shield layers OS3 arecompletely absorptive, light RL₂₂ from the LED element D₂₂ is totallyabsorbed by the optical shield layers OS3 and light RL₂₂′ is somewhatreflected by the slant side face of the LED element D₂₃ where theoptical shield layer OS3 is not provided. Also, light RL₂₃ from the LEDelement D₂₃ is totally absorbed by the optical shield layer OS3 andlight RL₂₃′ is somewhat reflected by the slant side face of the LEDelement D₂₃ where the optical shield layer OS3 is not provided.Therefore, although the dark region DR between the LED element D₂₂ andD₂₃ is not decreased, so that the light emitting regions ER₂₂ and ER₂₃of the LED elements D₂₂ and D₂₃ are not increased, no optical crosstalkbetween the light emitting regions ER₂₂ and ER₂₃ is generated. Even inthis case, the LED elements D₂₂ and D₂₃ can be closer to each other toincrease the light emitting regions ER₂₂ and ER₂₃.

Thus, in the semiconductor light-emitting device of FIG. 12, the darkregions between the LED elements can be decreased or suppressed, whileno optical crosstalk between the LED elements is generated.

The method for manufacturing the semiconductor light-emitting device ofFIG. 12 is about the same as the method for manufacturing thesemiconductor light-emitting device of FIG. 7, except for the following.Before the wafer bonding by a thermal pressurizing process, thesemiconductor body 1 is mesa-etched by a reactive ion etching (RIE)process using the growing sapphire substrate 10 as an etching stopper.As a result, the semiconductor structure formed by the n-type AlInGaNlayer 11, the active AlInGaN layer 12 and the p-type AlInGaN layer 13 ismesa-shaped viewed from the growing sapphire substrate 10; in otherwords, this semiconductor structure is reversely mesa-shaped viewed fromthe support body 2.

In FIG. 15, which is a cross-sectional view illustrating a fourthembodiment of the semiconductor light-emitting device according to thepresently disclosed subject matter, each of the LED elements D₂₂ and D₂₃are also reversely mesa-shaped, so that the distance between side facesof two adjacent LED elements is increased toward the support body 2.Note that a plan view of the semiconductor light-emitting device of FIG.15 is represented by FIG. 10 where the optical shield layer OS2 isreplaced by the optical shield layer OS4.

In FIG. 15, optical shield layers OS4, that are conductive, serve asn-side electrodes. That is, the optical shield layers OS4 areelectrically connected to the n-type AlInGaN layer 11 of the LED elementD₂₂ and D₂₃.

In FIG. 15, since the optical shield layers OS4 serve as n-sideelectrodes, the n-side electrode 15 and the bonding layer 31 of FIG. 7can be omitted.

The method for manufacturing the semiconductor light-emitting device ofFIG. 15 is about the same as the method for manufacturing thesemiconductor light-emitting device of FIG. 12, except for thefollowing. Before the formation of the optical shield layers OS4, theinsulating layer 19′ is formed by a sputtering process or the like and aphotolithography/etching process on only a part of the slant side faceof the reverse mesa-etched structure, so that the optical shield layersOS4 are electrically connected to the n-type AlInGaN layer 11.

In FIG. 16, which is a cross-sectional view illustrating a modificationof the semiconductor light-emitting device of FIG. 4B, a phosphor layerP2 made of silicone resin or the like including phosphor particles P20different from the phosphor particles P10 is formed between the LEDelement D₂₂ and D₂₃. For example, the phosphor particles P20 wavelengthconvert blue light into green light. Also, the phosphor layer P1including the phosphor particles P10 are formed on the LED element D₂₂and D₂₃ and the phosphor layer P2.

In FIG. 4B, note that light emitted from the upper face of the LEDelement D₂₂ and D₂₃ would be completely white; however, light emittedfrom the side faces of the LED element D₂₂ and D₂₃ would be white with ayellow-tint due to the long length of optical path, thus creating thecolor drift.

Contrary to this, in FIG. 16, since light emitted from the side faces ofthe LED element D₂₂ and D₂₃ is subjected to the phosphor particles P20,the length of optical path of the phosphor particles P10 is shortened,so that the light emitted from the side faces of the LED element D₂₂ andD₂₃ is white with no yellow-tint.

A method for forming the phosphor layers P1 and P2 will be explainedbelow.

First, a phosphor layer P2 including phosphor particles P20 is entirelycoated on a semiconductor light-emitting device including asemiconductor body 1 formed by LED element D₂₂ and D₂₃ bonded onto asupport body 2.

Next, the upper portion of the phosphor layer P2 is removed to exposethe upper faces of the LED element D₂₂ and D₂₃.

Finally, a phosphor layer P1 including the phosphor particles P10 isentirely coated on the LED element D₂₂ and D₂₃ and the phosphor layerP2.

Note that the modification of FIG. 16 can also be applied to theembodiments of FIGS. 10, 12 and 15.

In the above-described embodiments, the LED elements are square orrectangular viewed from the top; however, the LED elements can betriangular or hexagonal viewed from the top, so that the LED elementscan be in close proximity to each other.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the presently disclosedsubject matter without departing from the spirit or scope of thepresently disclosed subject matter. Thus, it is intended that thepresently disclosed subject matter covers the modifications andvariations of the presently disclosed subject matter provided they comewithin the scope of the appended claims and their equivalents. Allrelated or prior art references described above and in the Backgroundsection of the present specification are hereby incorporated in theirentirety by reference.

1. A semiconductor light-emitting device comprising: a semiconductorbody including light-emitting elements arranged in a matrix; a supportbody adapted to support said semiconductor body, wherein saidsemiconductor body further includes a plurality of optical shield layerseach provided at one of a first side face of a first one of saidlight-emitting elements and a second side face of a second one of saidlight-emitting elements opposing the first side face of said firstlight-emitting element.
 2. The semiconductor light-emitting device asset forth in claim 1, wherein said semiconductor body further includes aplurality of first insulating layers each provided between one of saidlight-emitting elements and one of said optical shield layers, saidoptical shield layers being electrically isolated from saidlight-emitting elements.
 3. The semiconductor light-emitting device asset forth in claim 1, wherein each of said light-emitting elementscomprises: a first semiconductor layer of a first conductivity type; asecond semiconductor layer of a second conductivity type opposite tosaid first conductivity type; an active semiconductor layer sandwichedby said first and second semiconductor layers, wherein said support bodycomprises: a support substrate; first wiring layers provided on saidsupport substrate, each of said first wiring layers being electricallyconnected into the second semiconductor layer of one of saidlight-emitting elements; a second wiring layer provided on said firstwiring layers via a second insulating layer, said second wiring layerbeing electrically connected to the first semiconductor layer of each ofsaid light-emitting elements.
 4. The semiconductor light-emitting deviceas set forth in claim 3, wherein each of said optical shield layers isconductive and electrically connected between the first semiconductorlayer of one of said light-emitting elements and said second wiringlayer.
 5. The semiconductor light-emitting device as set forth in claim1, wherein each of said light-emitting elements is mesa-shaped, so thata distance between said first and second side faces is graduallydecreased toward said support body.
 6. The semiconductor light-emittingdevice as set forth in claim 1, wherein each of said light-emittingelements is reversely mesa-shaped, so that a distance between said firstand second side faces is gradually increased toward said support body.7. The semiconductor light-emitting device as set forth in claim 1,wherein said semiconductor body further includes: a first phosphor layerincluding first phosphor particles provided between said light-emittingelements on said support body; and a second phosphor layer includingsecond phosphor particles different from said first phosphor particleson said light-emitting elements and said first phosphor layer.
 8. Thesemiconductor light-emitting device as set forth in claim 1, whereinsaid optical shield layers are reflective.
 9. The semiconductorlight-emitting device as set forth in claim 1, wherein said opticalshield layers are absorptive.